In the current case, by growing the setting degree of the rotating pace (constant velocity) of the substrate holder, the material gasoline supply periods for forming the compound semiconductor layer are each set at the required minimum duration. According to the vapor growth apparatus of an embodiment, the partition plates extend radially from the center line of the cylindrical portion to the inside wall of the cylindrical portion and intersect each other at a specified angle, where the angle is set in keeping with the durations of the periods in which the fabric gases are supplied to the substrate.

DEZ, hydrogen selenide, and vapepremiumuk hydrogen of two programs equipped into the cylindrical portion 1b through the material gasoline supply inlets 2 and three and the separation fuel provide inlets eight and eliquidesenligne (www.eliquidesenligne.com) eight are separated from one another by the partition plates 6A and 6B, and then attain the substrate holding surface 20 of the substrate holder 5 with out being blended with each other. The supplied materials gases are separated from one another by the fuel separation means, and e-cigaretteshop attain the substrate holding surface of the substrate holder from the fabric gasoline provide inlets without being combined with each other.

Thus the circulation paths of the fabric gases are separated from each other by the gas separation means, and e-cigaretteshop therefore the cation material gasoline and ezigarettenneu the anion material gas might be alternately equipped to the floor of the substrate by rotating the substrate holder. 6A and 6B separate the circulate paths of the material gases and hydrogen fuel extending from the fabric fuel provide inlets 2 and 3 and the separation gas supply inlets eight and eight to the substrate holding floor 20 in the growth stage.

A zinc selenide layer is to be grown as a compound semiconductor layer on a GaAs substrate Diethyl zinc (DEZ) of 1 system is used as a cation materials gasoline, hydrogen selenide of 1 system is used as an anion materials fuel, and hydrogen of two systems are used as a separation gasoline. TMG and arsine. Moreover, in response to the ALE technique, there is supplied a period during which purging is effected with hydrogen between a TMG supply period and an arsine provide interval in a way as proven in FIGS.

TMG is ready at 20 SCCM, and acceleration is carried out by way of the hydrogen fuel of a circulate rate of 5 SLM.

8, 8, vapeeinweg and vapemod eight at a fee of 10 SLM at every inlet. 10 SLM at every inlet. The gas separation means is comprised of a move of the separation gas in a layer type extending from the separation gasoline provide inlet to the substrate holding floor.